• DocumentCode
    2069021
  • Title

    Effect of flatband voltage and surface field on the MOS capacitance under triangular potential well approximation

  • Author

    Chakraborty, Chandan

  • Author_Institution
    Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
  • fYear
    2012
  • fDate
    17-19 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, the effect of flatband voltage shift on the capacitance of an p-type MOS device is theoretically described as functions of surface field, oxide thickness and doping concentrations. The capacitance of the device shows its higher values at lower flatband voltage, higher surface field, thinner gate oxide and lower doping concentration. The results are presented and discussed here.
  • Keywords
    MIS devices; doping profiles; MOS capacitance; doping concentrations; flatband voltage shift; gate oxide; oxide thickness; p-type MOS device; surface field; triangular potential well approximation; MOS capacitance; Quantum mechanical effects; Triangular well approximation; band bending; fltaband voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication (CODEC), 2012 5th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-2619-3
  • Type

    conf

  • DOI
    10.1109/CODEC.2012.6509241
  • Filename
    6509241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069021