• DocumentCode
    2069175
  • Title

    Performance improvement of La2O3/p-GaAs MOS capacitor by using Si pasivation layer

  • Author

    Das, Aruneema ; Chattopadhyay, Subrata ; Dalapati, Goutam Kumar

  • Author_Institution
    Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
  • fYear
    2012
  • fDate
    17-19 Dec. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The RF sputtered La2O3/ p-GaAs MOS capacitors with and without Si interface passivation layer (IPL) have been fabricated and characterized. It has been observed that the presence of (La2O3)1-x(SiO2)x at the interface improved the device characteristics in terms of oxide capacitance (~3.3 fF/μm2), frequency dispersion (~8%) and interface state density (~1.2×1012 cm-2 eV-1). The best device performance was obtained for Al/ La2O3/Si/p-GaAs samples annealed at 500oC.
  • Keywords
    III-V semiconductors; MOS capacitors; annealing; elemental semiconductors; gallium arsenide; lanthanum compounds; passivation; silicon; sputter deposition; IPL; La2O3-GaAs-Si; MOS capacitor; RF sputtering; annealing; frequency dispersion; interface passivation layer; interface state density; oxide capacitance; temperature 500 degC; GaAs; La2O3; Si passivation; interface state density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication (CODEC), 2012 5th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-2619-3
  • Type

    conf

  • DOI
    10.1109/CODEC.2012.6509248
  • Filename
    6509248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069175