• DocumentCode
    2070228
  • Title

    Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN

  • Author

    Das, Teerath ; Panda, Siddhartha ; Bera, P.P. ; Biswas, D.

  • Author_Institution
    Inst. of Radiophys. & Electron., Univ. of Calcutta, Kolkata, India
  • fYear
    2012
  • fDate
    17-19 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for InXGa1-XP/GaAs, InXGa1-XAs/Al0.2Ga0.8As and InXGa1-XN/GaN QWs.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InXGa1-XAs-Al0.2Ga0.8As; InXGa1-XN-GaN; InXGa1-XP-GaAs; band offsets; optoelectronic properties; strain effect; strained III-V compound semiconductor quantum wells; Band offset; DLTS; Optoelectronic; Quantum well;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication (CODEC), 2012 5th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-2619-3
  • Type

    conf

  • DOI
    10.1109/CODEC.2012.6509295
  • Filename
    6509295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2070228