• DocumentCode
    2070485
  • Title

    Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

  • Author

    Antonova, Irina V. ; Gulyaev, Mitrofan B. ; Skuratov, Vladimir A. ; Marin, Denis V. ; Zaikina, Elvira V. ; Yanovitskaya, Zoya S. ; Goldstein, Yehuda ; Jedrzejewski, Jedzzey

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk
  • fYear
    2006
  • fDate
    7-10 Nov. 2006
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    The samples with layer of silicon nanocrystals ncSi embedded in SiO2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.
  • Keywords
    elemental semiconductors; ion implantation; nanostructured materials; nanotechnology; photoluminescence; silicon; Si-SiO2; high energy ion implantation; nanocrystals; oxide matrix; photoluminescence; silicon; Annealing; CMOS technology; Capacitance-voltage characteristics; Chemical technology; Ion implantation; Nanocrystals; Nanoparticles; Photoluminescence; Physics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Photonics, 2006. MEP 2006. Multiconference on
  • Conference_Location
    Guanajuato
  • Print_ISBN
    1-4244-0627-7
  • Electronic_ISBN
    1-4244-0628-5
  • Type

    conf

  • DOI
    10.1109/MEP.2006.335625
  • Filename
    4135709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2070485