Design of a Ka-Band LNA for SoC space-based millimeter-wave radiometers

Author

Aluigi, Luca ; Alimenti, Federico ; Roselli, Luca

Author_Institution

Dept. of Electron. & Inf. Eng., Univ. of Perugia, Perugia, Italy

fYear

2011

fDate

15-16 Sept. 2011

Firstpage

156

Lastpage

159

Abstract

This paper presents the design of a Ka-band two-stage LNA for System-on-Chip (SoC) space-based radiometers. The circuit features proper self-adaptive compensation to achieve robustness against temperature variations. The technology selected is a 250nm SiGe BiCMOS technology from IHP foundry. This selection is motivated by the space qualification of the above process, which is under development at IHP. An automatic design procedure for inductors has been developed on purpose. Preliminary simulations of the designed LNA show a conversion gain of 24 dB at 31.4 GHz with a noise figure of 3.5 dB. The obtained sensitivity is very promising for total power radiometric applications.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; radiometry; space vehicle electronics; system-on-chip; BiCMOS technology; IHP foundry; Ka Band LNA; SiGe; SoC; System-on-Chip; frequency 31.4 GHz; gain 24 dB; noise figure 3.5 dB; self adaptive compensation; size 250 nm; space based millimeter wave radiometers; Inductors; Microwave radiometry; Millimeter wave technology; Noise; Noise measurement; Radiometers; System-on-a-chip; LNA; System-on-chip (SoC); millimeter-wave; radiometer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International

Conference_Location

Sitges

Print_ISBN

978-1-61284-963-8

Type

conf

DOI

10.1109/IMWS3.2011.6061863

Filename

6061863