DocumentCode
2072587
Title
Design and simulation of a W-band broadband Low Noise Amplifier
Author
Wang Yawei ; Yu Weihua
Author_Institution
Beijing Inst. of Technol., Beijing, China
fYear
2013
fDate
25-28 Aug. 2013
Firstpage
119
Lastpage
122
Abstract
This paper introduces the design of a four-stage W-band broadband Low Noise Amplifier (LNA) using Monolithic Microwave Integrated Circuit (MMIC). The LNA uses CPW as the input and output port and has a low noise figure using GaAs MHEMT technology. In order to reduce the chip size and circuit´s complexity, single bias voltage supply is used in this design. The LNA has attained a gain more than 19dB over the frequency range 90 ~ 113GHz and the noise figure lower than 3.2dB.
Keywords
III-V semiconductors; MMIC amplifiers; coplanar waveguides; gallium arsenide; low noise amplifiers; wideband amplifiers; CPW; GaAs; MHEMT technology; MMIC; W-band broadband low noise amplifier; chip size; circuit complexity; monolithic microwave integrated circuit; noise figure; single bias voltage supply; Gallium arsenide; Indium phosphide; Noise; Noise figure; mHEMTs; D007IH; LNA; MHEMT;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location
Qingdao
Type
conf
DOI
10.1109/ICMTCE.2013.6812435
Filename
6812435
Link To Document