DocumentCode
2073001
Title
Effect of impurities in the channel of a spin field effect transistor (SPINFET)
Author
Cahay, Marc ; Bandyopadhyay, Supriyo
Author_Institution
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Volume
1
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
171
Abstract
We show that the conductance modulation of Spin Field Effect Transistors (SPINFET) is affected by a single (non-magnetic) impurity in the transistor´s channel. The extreme sensitivity of the amplitude and phase of the transistor´s conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device implementation is concerned.
Keywords
current fluctuations; electric admittance; field effect transistors; impurity distribution; semiconductor device models; conductance fluctuations; conductance modulation; impurities effect; mesoscopic samples; spin field effect transistor; transistor channel; transistor conductance oscillations; Computer science; Electrons; FETs; Fluctuations; Impurities; Lighting control; Magnetic fields; Magnetization; Resonance; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231743
Filename
1231743
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