A 10mW CMOS RF Front-End for Portable GPS Receivers

Author

Xia, Wenbo ; Zhang, Xiaolin

Author_Institution

Sch. of Electron. Inf. Eng., Beihang Univ., Beijing, China

fYear

2009

fDate

24-26 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

An integrated 1.57 GHz Low Noise Amplifier (LNA) and an active balanced mixer for the RF front-end in the portable global positioning system (GPS) receivers is proposed based on SMIC 180 nm 1P6M RF CMOS process. The MOS transistors in the proposed LNA are biased in moderately inverted region to achieve low power. The active balanced mixer is based on Gilbert cell. The post-layout simulation results show that, at worst case, a voltage conversion gain of 35 dB is achieved with cascade noise figure (NF) of 3.3 dB, an input return loss of 17.7 dB and an input 1dB compression point of -38 dBm. The power consumption of the circuit is 10 mW at supply voltage of 1.8 V.

Keywords

CMOS integrated circuits; Global Positioning System; low noise amplifiers; radio receivers; CMOS RF front-end; LNA; frequency 1.75 GHz; gain 35 dB; loss 17.7 dB; low noise amplifier; noise figure 3.3 dB; portable GPS receivers; power 10 mW; size 180 nm; voltage 1.8 V; Active noise reduction; CMOS process; Circuit simulation; Gain; Global Positioning System; Low-noise amplifiers; MOSFETs; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3692-7

Electronic_ISBN

978-1-4244-3693-4

Type

conf

DOI

10.1109/WICOM.2009.5301045

Filename

5301045