New ultra-precise semiconductor and metal nanostructures: tubes, shells and their ordered arrays

Author

Prinz, V. Ya

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

199

Abstract

The brief overview focuses on the fabrication methods and properties of new ultra-precise nanotubes, nanoshells formed from single-crystal A3B5 and Si/GeSi strained heterofilms. Results on the formation of periodic structures, open and closed nanoshells of various shapes with the minimum radius of curvature of ∼1 nm are described. Properties of tubes containing electron gas and of ordered arrays of quantum dots are discussed. The fabricated nanoshells offer much promise as building blocks for nanoelectronic and nanomechanical devices, their fabrication technology being quite compatible with the integrated-circuit technology.

Keywords

Ge-Si alloys; electron gas; elemental semiconductors; nanoelectronics; nanotechnology; nanotubes; periodic structures; semiconductor quantum dots; semiconductor thin films; silicon; 1 nm; A3B5 single crystal; Si-GeSi; Si/GeSi strained heterofilms; electron gas; integrated circuit; metal nanostructures; nanoelectronic devices; nanomechanical devices; nanoshells; nanotubes; ordered arrays; periodic structures; quantum dots; radius of curvature; ultra precise semiconductor; Electron tubes; Fabrication; Germanium silicon alloys; Nanoscale devices; Nanotubes; Periodic structures; Quantum dots; Semiconductor nanostructures; Shape; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231750

Filename

1231750