DocumentCode
2073464
Title
Quantum Monte Carlo simulation of the single electron transistor conductance
Author
Gelmont, B. ; Woolard, D. ; Williams, R.
Author_Institution
ECE Dept., Virginia Univ., Charlottesville, VA, USA
Volume
1
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
232
Abstract
Quantum Monte-Carlo simulation is made for symmetric Anderson model. The Matsubara function is used for the calculation the conductance of the Single Electron Transistors utilizing a Landauer-type formula. Comparison with "poor man\´s scaling" shows that there is a big difference at moderate Coulomb interaction.
Keywords
Anderson model; Coulomb blockade; Monte Carlo methods; electric admittance; quantum dots; single electron transistors; Coulomb interaction; Landauer type formula; Matsubara function; poor man scaling; quantum Monte Carlo simulation; single electron transistor conductance; symmetric Anderson model; Green function; Image analysis; Integral equations; Magnetic moments; Military computing; Quantum computing; Quantum dots; Single electron transistors; Temperature; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231758
Filename
1231758
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