Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes

Author

Navarro, C. ; Bawedin, M. ; Andrieu, F. ; Cluzel, J. ; Solaro, Y. ; Fonteneau, P. ; Martinez, F. ; Sagnes, B. ; Cristoloveanu, S.

Author_Institution

IES, Univ. of Montpellier II, Montpellier, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

189

Lastpage

192

Abstract

The SOI structural characterization is addressed in this paper by using split capacitance measurements on p-i-n gated diodes. The p⁺ and n⁺ contacts supply promptly electrons and holes in the body, preventing the diode from the parasitic transient effects that undermine the capacitance measurements in SOI MOSFETs. A novel method to determine the silicon film thickness, based on the capacitance derivative, is presented and validated by experiments and TCAD simulations.

Keywords

MOSFET; capacitance measurement; p-i-n diodes; silicon-on-insulator; FDSOI p-i-n gated diodes; MOSFET; TCAD simulations; capacitance derivative; electrons; holes; n⁺ contacts; p⁺ contacts; parasitic transient effects; split capacitance measurements; structural characterization; thickness characterization; Capacitance; Capacitance measurement; Cathodes; Charge carrier processes; Films; Logic gates; P-i-n diodes; Capacitance; SOI; film thickness; gated diode; inter-gate coupling; p-i-n; split C-V; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063745

Filename

7063745