Toward understanding of donor-traps-related dispersion phenomena on normally-ON AlGaN/GaN HEMT through transient simulations

Author

Strangio, S. ; Magnone, P. ; Crupi, F. ; Fiegna, C. ; Pace, C. ; Iannaccone, G. ; Heiman, A. ; Shamir, D.

Author_Institution

DIMES, Univ. della Calabria, Arcavacata di Rende, Italy

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

217

Lastpage

220

Abstract

In this paper we report the results of a TCAD simulation study performed on AlGaN/GaN High Electron Mobility Transistor (HEMT). The effects of interface states, leading to drain current dispersion phenomena as a result of fast sweep of the drain voltage, are investigated in transient simulations. The virtual drain model is introduced to explain the drain current overshoot due to drain voltage pulsing.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; AlGaN-GaN; TCAD simulation study; donor-traps-related dispersion phenomena; drain current dispersion phenomena; drain current overshoot; drain voltage pulsing; drain voltage sweep; high electron mobility transistor; normally-ON HEMT; virtual drain model; Aluminum gallium nitride; Electric potential; Electron traps; Gallium nitride; HEMTs; Logic gates; Silicon compounds; AlGaN/GaN; Donor Traps; HEMT; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063752

Filename

7063752