DocumentCode
2075380
Title
Fully depleted SOI: Achievements and future developments
Author
Haond, M.
Author_Institution
STMicroelectron., Crolles, France
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
37
Lastpage
40
Abstract
This paper presents the main recent achievements of the UTBB-FDSOI technology. It shows some of the power advantages of the 28nm technology node today used for production. It details the 14nm nodemain features with the first generation of boosters. It finally indicates some technology bricks under development for the 10 nm generation.
Keywords
elemental semiconductors; semiconductor technology; silicon-on-insulator; UTBB-FDSOI technology; fully-depleted SOI; power advantages; size 10 nm; size 14 nm; size 28 nm; technology bricks; ultrathin body-box-fully-depleted silicon-on-insulator; CMOS integrated circuits; Films; Logic gates; MOS devices; Performance evaluation; Silicon; Silicon germanium; Fully depleted devices; forward biasing; strain silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location
Bologna
Type
conf
DOI
10.1109/ULIS.2015.7063767
Filename
7063767
Link To Document