DocumentCode
2075870
Title
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network
Author
Garbin, Daniele ; Rafhay, Quentin ; Vianello, Elisa ; Jeannot, Simon ; Candelier, Philippe ; DeSalvo, Barbara ; Ghibaudo, Gerard ; Perniola, Luca
Author_Institution
LETI, CEA, Grenoble, France
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
125
Lastpage
128
Abstract
In this work, a model is proposed to explain the variability of OxRAM devices, both in their high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution.
Keywords
integrated circuit modelling; resistive RAM; 3D resistance network; OxRAM variability modeling; low-to-high-resistance state; oxide-based resistive RAM; resistance stochastic nature; specific spatial distribution; stochastic trap-assisted tunneling-based resistor network; trap random placement; trap-assisted tunneling current; Hafnium compounds; Resistance; Solid modeling; Switches; Three-dimensional displays; Tunneling; OxRAM; RRAM; trap assisted tunneling; variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location
Bologna
Type
conf
DOI
10.1109/ULIS.2015.7063789
Filename
7063789
Link To Document