Schottky barrier height engineering for next generation DRAM capacitors

Author

Kyuho Cho ; Pesic, Milan ; Knebel, Steve ; Changhwa Jung ; Jaewan Chang ; Hanjin Lim ; Kolomiiets, Nadiia ; Afanas´ev, Valeri V. ; Schroeder, Uwe ; Mikolajick, Thomas

Author_Institution

Semicond. Res. Center, Samsung Electron., Hwasung, South Korea

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

129

Lastpage

132

Abstract

DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The Schottky Barrier Height (SBH) of a noble metal electrode (Pt) on atomic layer deposited ZrO₂/Al₂O₃/ZrO₂ (ZAZ, 6 nm) was evaluated and compared to a TiN electrode. Internal Photo Emission Spectroscopy (IPE) and Photoconductivity measurement (PC) were used to estimate the SBH and band gap, respectively. The SBH difference between the two electrodes was evaluated in comparison with a previously reported model. Finally, the impact of an increased SBH on dielectric scaling will be discussed based on a leakage current simulation of a ZrO₂ capacitor.

Keywords

DRAM chips; Schottky barriers; atomic layer deposition; capacitors; photoelectron spectra; zirconium compounds; IPE; PC; SBH; SBH difference; Schottky barrier height engineering; ZrO₂-Al₂O₃-ZrO₂; atomic layer deposition; band gap; capacitor dielectric; dielectric scaling; internal photo emission spectroscopy; leakage current simulation; metal electrode; next generation DRAM capacitors; photoconductivity measurement; physical thickness reduction; zirconium dioxie capacitor; Capacitors; Current measurement; Dielectric measurement; Electrodes; Leakage currents; Tin; DRAM capacitor; Schottky barrier height; ZrO2;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063790

Filename

7063790