Effects of electrical stress and ionizing radiation on Si-based TFETs

Author

Lili Ding ; Gerardin, Simone ; Paccagnella, Alessandro ; Gnani, Elena ; Bagatin, Marta ; Driussi, Francesco ; Selmi, Luca ; Le Royer, Cyrille

Author_Institution

DEI, Univ. of Padova, Padua, Italy

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

137

Lastpage

140

Abstract

The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.

Keywords

elemental semiconductors; field effect transistors; interface states; radiation hardening (electronics); silicon; Si; electrical stress effect suppression; gate voltage; interface trap accumulation; ionizing radiation; radiation tests; radiation-induced degradation; silicon-based TFET; threshold voltage shift; Current measurement; Degradation; Ionizing radiation; Logic gates; MOSFET; Radiation effects; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063792

Filename

7063792