Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut™ GeOI substrates

Author

Xiao Yu ; Jian Kang ; Zhang, Rui ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Sch. of Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

161

Lastpage

164

Abstract

We report the first demonstration of ultrathin-body GeOI MOSFETs utilizing a surface region of Smart-Cut™ GeOI substrates with high material quality. The devices are realized by flipping the Smart-Cut™ GeOI substrates, directly bonding them to another Si substrate, removing the supporting Si substrate of the Smart-Cut™ GeOI and thinning the flipped GeOI films. The normal operation of pMOSFETs is confirmed for GeOI with thickness down to 11 nm. It is found that the hole mobility of the flipped GeOI is higher at a given GeOI thickness than that of the original GeOI. The peak effective hole mobility of 117 cm²/Vs, is obtained for 11-nm-thick-GeOI pMOSFETs.

Keywords

MOSFET; elemental semiconductors; germanium; hole mobility; Ge; flipped Smart-Cut GeOI substrate; hole mobility; size 11 nm; ultrathin-body germanium-on-insulator pMOSFET; Crystals; MOSFET; Rough surfaces; Silicon; Substrates; Surface roughness; Surface treatment; GeOI; mobility; ultrathin-body;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063798

Filename

7063798