Reverse-order source/drain formation with double offset spacer (RODOS) for CMOS low-power, high-speed and low-noise amplifiers

Author

Choi, Woo Young ; Lee, Jong Duk ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

189

Lastpage

192

Abstract

RODOS (Reverse-Order source/drain formation with Double Offset Spacer) was proposed for low-power, high-speed and low-noise amplifiers. Relying on simulation data, we confirmed the high feasibility of the RODOS process. It showed improved performance in linearity (V_IP3). Additionally, by optimizing process parameters, we achieved small gate delay (CV/I) and low static/dynamic power consumption. The process satisfied most of the requirements of LOP and LSTP in ITRS 2002. Finally, we found that devices with the RODOS structure can be a promising alternative to implement low-power, high-speed and low-noise amplifiers for radio on a chip.

Keywords

CMOS analogue integrated circuits; MOSFET; amplifiers; circuit optimisation; circuit simulation; high-speed integrated circuits; integrated circuit noise; intermodulation; low-power electronics; transceivers; CMOS high-speed amplifiers; CMOS low-noise amplifiers; CMOS low-power amplifiers; ITRS 2002; LOP requirements; LSTP requirements; RODOS; double offset spacer; gate delay; generic transceiver; intermodulation products; linearity performance; low static/dynamic power consumption; process parameter optimization; radio on a chip; reverse-order source/drain formation; simulation data; CMOS technology; Circuits; Degradation; Energy consumption; Linearity; Low-noise amplifiers; Permission; Radio frequency; Space technology; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics and Design, 2003. ISLPED '03. Proceedings of the 2003 International Symposium on

Print_ISBN

1-58113-682-X

Type

conf

DOI

10.1109/LPE.2003.1231860

Filename

1231860