Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

Author

Jiang Cao ; Pala, Marco ; Cresti, Alessandro ; Esseni, David

Author_Institution

IMEP, Univ. Grenoble Alpes, Grenoble, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

245

Lastpage

248

Abstract

We present a self-consistent quantum simulation of an MoS₂-WTe₂ inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green´s function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<;30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.

Keywords

Green´s function methods; MOSFET; Poisson equation; electrostatics; molybdenum compounds; tungsten compounds; tunnel transistors; 2D gapped crystals; MoS₂-WTe₂; NEGF formalism; Poisson equation; channel-length scaling; device electrostatics; electron-phonon scattering; heterojunction inter-layer TFET; nonequilibrium Greens function; quantum simulation; self-consistent coupling; tunnel FET; tunnel field-effect transistor; Chemicals; Couplings; Current density; Doping; Logic gates; Semiconductor process modeling; Tunneling; NEGF; Quantum simulation; Transition metal dichalcogenide; Tunnel FET; subthermal sub-threshold swing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063819

Filename

7063819