Enhanced dynamic threshold UTBB SOI at high temperature

This work focuses on the high temperature analysis in extensionless ultra-thin body and buried oxide (UTBB) SOI MOSFETs in dynamic threshold (DT) mode, as well as in enhanced DT (eDT) mode operation for the first time. In spite of the higher transconductance temperature degradation factor (c), the DT and eDT operations resulted in a lower V_T variation with temperature and a lower Zero-Temperature-Coefficient (ZTC) point with the same current level for all k-values. Concerning the analog parameters, the transistor efficiency (gm/I_D), Early voltage (V_EA) and intrinsic voltage gain (A_v) were degraded at high temperature. However, the improvement thanks to DT and eDT modes compensates and further enhances these parameters.