Perspective of RF design in future planar and FinFET CMOS

Author

Borremans, J. ; Parvais, B. ; Dehan, M. ; Thijs, S. ; Wambacq, P. ; Mercha, A. ; Kuijk, M. ; Carchon, G. ; Decoutere, S.

Author_Institution

IMEC, Leuven

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

75

Lastpage

78

Abstract

Scaling of CMOS transistors beyond 45 nm requires architectural redesign of the devices. FinFETs are proposed to recover the reduced channel control. This work evaluates the perspective of RF design in planar bulk vs. FinFET SOI for (sub-)45 nm CMOS on a key RF circuit: a low-noise amplifier (LNA). The planar and FinFET devices with channel lengths down to 40 nm are compared in both wideband and narrowband designs up to 14 GHz to illustrate the RF and ESD protection performance perspective. Planar devices push the RF performance. FinFETs lag somewhat behind, but show promising RF performance.

Keywords

CMOS integrated circuits; MOSFET; electrostatic discharge; integrated circuit design; low noise amplifiers; radiofrequency integrated circuits; silicon-on-insulator; CMOS transistor scaling; ESD protection; FinFET CMOS; RF design; architectural redesign; low-noise amplifier; planar devices; silicon-on-insulator; Circuit noise; Electrostatic discharge; FinFETs; High K dielectric materials; Narrowband; Protection; Radio frequency; Silicon; Transistors; Wideband; CMOS; FinFET; LNA; RF; planar; scaling;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561389

Filename

4561389