• DocumentCode
    2081396
  • Title

    Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators

  • Author

    Kwon, Youngwoo ; Pavlidis, Dimitris

  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    161
  • Lastpage
    166
  • Abstract
    A large signal analysis method for simulating HEMT oscillators has been developed and applied to the design of a monolithic W-band HEMT oscillator. The analysis method uses measured small-signal S-parameters and employs a two-dimensional cubic spline interpolation routine and a harmonic balance technique to perform an accurate device modeling. The monolithic oscillators were fabricated using InAlAs/InGaAs heterostructures on InP substrate. A power level of 1.2 mW at 76.8 GHz was obtained using InAlAs/InGaAs heterostructures on InP substrate out of chips with 0.1 ¿m × 36 ¿m HEMT´s. Comparisons between theoretical and experimental characteristics are also reported.
  • Keywords
    Analytical models; HEMTs; Harmonic analysis; Indium compounds; Indium gallium arsenide; Indium phosphide; Oscillators; Performance analysis; Signal analysis; Signal design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336427
  • Filename
    4136282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081396