• DocumentCode
    2081489
  • Title

    Highly Stable 15 dBm Low Noise GaAs MESFET Source at 45 GHz using a GaAs PHEMT as a Frequency Doubler

  • Author

    Khanna, A.P.S. ; Creamer, Carl ; Topacio, Ed ; Camargo, Edmar

  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    184
  • Lastpage
    189
  • Abstract
    A highly stable GaAs MESFET dielectric resonator oscillator with a GaAs PHEMT frequency doubler, operating at 45 GHz, has been developed. The oscillator presents + 15 dBm minimum output power, ±0.01% temperature stability and ¿82 dBc/Hz phase noise at 10 Khz from the carrier. The design approach is discussed and practical test results are presented.
  • Keywords
    Dielectrics; Frequency; Gallium arsenide; MESFETs; Oscillators; PHEMTs; Phase noise; Power generation; Stability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336431
  • Filename
    4136286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081489