DocumentCode
2081849
Title
Electromigration simulations for small scale structures
Author
O´Sullivan, Connor ; Rohan, Michael ; Mathewson, Alan
Author_Institution
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear
1995
fDate
34744
Firstpage
42583
Lastpage
42589
Abstract
This paper presents the results of the investigation of different via structures (the connections between different layers of metals) and different via configurations using the general purpose finite element simulator ANSYS. The simulations are used to help optimize the reliability of a 0.5 μm process
Keywords
electromigration; finite element analysis; metallisation; semiconductor process modelling; 0.5 micron; ANSYS finite element simulator; connections; electromigration simulations; metal layers; optimization; reliability; small scale structures; via structures;
fLanguage
English
Publisher
iet
Conference_Titel
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950184
Filename
473093
Link To Document