Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

Author

Douglas, E.A. ; Pearton, S.J. ; Ren, F. ; Poling, B. ; Heller, E. ; Via, D.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Florida, Gainesville, FL, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

AlGaN/GaN HEMTs with a gate length of 0.125 μm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure along the channel length, and micro- photoluminescence indicates an increase in non- radiative trap formation in regions of failure.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; electroluminescence; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; AlGaN-GaN; RF stability; X-band operation; electroluminescence; frequency 10 GHz; high electron mobility transistors; microphotoluminescence; nonradiative trap formation; size 0.125 mum; substantial Schottky contact degradation; voltage 20 V; voltage 25 V; Degradation; Gallium nitride; HEMTs; Logic gates; MODFETs; Radio frequency; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062458

Filename

6062458