High power GaN-HEMT microwave switches for X-Band and wideband applications

Author

Bettidi, A. ; Cetronio, A. ; Dominicis, M. De ; Giolo, G. ; Lanzieri, C. ; Manna, A. ; Peroni, M. ; Proietti, C. ; Romanini, P.

Author_Institution

SELEX Sist. Integrati SpA, Rome

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

329

Lastpage

332

Abstract

In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the wideband switch shows an insertion loss compression of 1 dB for input power higher than 34.3 dBm in the entire bandwidth.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; field effect transistor switches; gallium compounds; microwave switches; wide band gap semiconductors; GaN; X-band applications; frequency 2 GHz to 18 GHz; high power GaN-HEMT microwave switches; power SPDT MMIC switches; wideband applications; Aluminum gallium nitride; Coplanar waveguides; Gallium nitride; HEMTs; MMICs; MODFETs; Optical device fabrication; Radio frequency; Switches; Wideband; AlGaN/GaN; X-band; monolithic microwave integrated circuit (MMIC); power switch; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561447

Filename

4561447