DocumentCode
2082550
Title
Ultrafast carrier dynamics,in ferromagnetic semiconductors
Author
Wang, J. ; Kono, J. ; Owia, A. ; Munekata, H. ; Stanton, C.J.
Author_Institution
Departmenl of Electr. & Comput. Eng., Rice Univ., Houston, TX
fYear
2004
fDate
21-21 May 2004
Firstpage
297
Lastpage
299
Abstract
Two-color, time-resolved reflectivity is used to study femtosecond and picosecond carrier dynamics in III-V ferromagnetic semiconductors. Ultrashort carrier lifetimes, oscillations, and multi-level decay processes were observed. We discuss the dependence of data on the probe wavelength, pump intensity, and sample temperature
Keywords
III-V semiconductors; carrier lifetime; carrier mobility; ferromagnetic materials; high-speed optical techniques; magnetic semiconductors; reflectivity; III-V ferromagnetic semiconductors; carrier oscillations; femtosecond carrier dynamics; ferromagnetic semiconductors; multilevel decay processes; picosecond carrier dynamics; time-resolved reflectivity; two-color reflectivity; ultrafast carrier dynamics; ultrashort carrier lifetimes;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366760
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