Cell-shifting compaction of building-cell methodology for high-speed GaAs standard-cell LSIs

The authors propose a novel cell-shifting compaction concept for building-cell methodology to realize high-speed GaAs standard-cell LSIs. This compaction reduces the layout-area and stray capacitance and the inductance of routings, and leads to a large degree of freedom for cell placement. The cell-shifting compaction is also a valid approach for Si standard-cell LSIs