3D group-cross symmetrical inductor: A new inductor architecture with higher self-resonance frequency and Q factor dedicated to advanced HR SOI CMOS technology

Author

Gianesello, F. ; Gloria, D. ; Raynaud, C. ; Touret, P. ; Rauber, B.

Author_Institution

TPS Lab., FTM, Crolles

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

457

Lastpage

460

Abstract

During past years, high resistivity (HR) SOI CMOS technology has emerged as a promising one for the integration of RF applications, mainly because of the improvement of passive component related to HR substrate. In this trend, 3D symmetrical spiral inductor (3DSI) has been proposed on SOI to lower the amount of area consumed by inductor while offering comparable performance than equivalent bulk technology. This paper presents a novel 3D structure group-cross symmetrical spiral inductor (3DGCSI), which has higher self-resonance frequency and quality factor, but has the same DC inductance and occupies the same layout area as 3DSI. Measurement data of 3DGCSI and 3DSI are compared with each other to show the advantages of this new inductor structure.

Keywords

CMOS integrated circuits; Q-factor; electrical resistivity; inductors; silicon-on-insulator; 3D group-cross symmetrical spiral inductor; HR SOI CMOS; Q factor; high resistivity SOI CMOS technology; self-resonance frequency; CMOS technology; Conductivity; Costs; Dielectric substrates; Inductors; Insulation; Q factor; Radio frequency; Silicon on insulator technology; Spirals; High Resistivity; Integrated Inductor; Quality factor; SOI; Self resonance frequency; Symmetrical inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561476

Filename

4561476