A 90-nm CMOS LNA for MB-OFDM UWB in QFN package

Author

Wong, King Wah ; Arasu, M. Annamalai ; Chan, Wei Khuen

Author_Institution

A*STAR, Inst. of Microelectron., Singapore

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

497

Lastpage

500

Abstract

In this work, the design of a single ended low-noise amplifier (LNA) dedicated for multi-band orthogonal frequency-division multiplexing (MB-OFDM) Band Group-1 ultra-wideband (UWB) band is described. It achieves a flat gain from 2 to 5 GHz of 17 dB while drawing a current of 15.9 mA from a 1.2 V supply. The circuit has been implemented in 90 -nm CMOS technology and features a minimum noise figure (NF) of 2.5 dB over the frequency range as well as an input referred third-order intermodulation (IIP3) of -8 dBm.

Keywords

CMOS integrated circuits; OFDM modulation; intermodulation; low noise amplifiers; ultra wideband communication; CMOS LNA; MB-OFDM UWB; QFN package; current 15.9 mA; frequency 2 GHz to 5 GHz; gain 17 dB; input referred third-order intermodulation; multiband orthogonal frequency-division multiplexing; noise figure 2.5 dB; single ended low-noise amplifier; ultra-wideband band; voltage 1.2 V; Bandwidth; CMOS technology; Filters; Impedance matching; Inductance; Network topology; Noise measurement; Packaging; Performance gain; Wideband; 90nm CMOS; Front End; LNA; UWB; low noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561485

Filename

4561485