• DocumentCode
    2083546
  • Title

    Proton-Induced Single Event Upsets in 90nm Technology High Performance SRAM Memories

  • Author

    Puchner, H., Sr. ; Tausch, J. ; Koga, R.

  • Author_Institution
    Aerosp. & Defense Div., Cypress Semicond., San Jose, CA, USA
  • fYear
    2011
  • fDate
    25-29 July 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are analyzed and compared with published data for 65nm/90nm technologies. Only 100× increase in cross section is discovered compared to several orders of magnitude for others.
  • Keywords
    SRAM chips; radiation effects; high performance SRAM memories; low energy proton; proton-induced single event upsets; quad data rate; radiation; size 90 nm; Computer architecture; Microprocessors; Particle beams; Protons; Random access memory; Sensitivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2011 IEEE
  • Conference_Location
    Las Vegas, NV
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4577-1281-4
  • Type

    conf

  • DOI
    10.1109/REDW.2010.6062523
  • Filename
    6062523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083546