• DocumentCode
    2083616
  • Title

    Effects of forward body biasing on the high frequency noise in deep submicron NMOSFETs

  • Author

    Su, Hao ; Wang, Hong ; Xu, Tao ; Zeng, Rong

  • Author_Institution
    Microelectron. Centre, Nanyang Technol. Univ., Singapore
  • fYear
    2008
  • fDate
    June 17 2008-April 17 2008
  • Firstpage
    567
  • Lastpage
    570
  • Abstract
    In this paper, the impact of forward body biasing on the high frequency noise in deep sub-micrometer NMOSFETs is presented. Experimental results show that high frequency noise is increased with the body bias Vb, and have a positive dependence on the substrate bias. Possible mechanism behind the increase in RF noise of MOSFET under the forward body bias is studied. The increase of NFmin and Rn with the increase in Vb may appear as a great concern for the application of forward body bias scheme in the low noise circuit design.
  • Keywords
    MOSFET; semiconductor device noise; RF noise; deep submicron NMOSFET; forward body biasing; high frequency noise; low noise circuit design; substrate bias; 1f noise; CMOS technology; Circuit noise; Impact ionization; MOSFET circuits; Radiative recombination; Radio frequency; Semiconductor device noise; Spontaneous emission; Substrates; MOSFETs; RF noise; body bias; semiconductor device noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-1808-4
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2008.4561501
  • Filename
    4561501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083616