Radiation Characterization of Commercial GaN Devices

Author

Harris, Richard D. ; Scheick, Leif Z. ; Hoffman, James P. ; Thrivikraman, Tushar ; Jenabi, Masud ; Gim, Yonggyu ; Miyahira, Tetsuo

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2011

fDate

25-29 July 2011

Firstpage

1

Lastpage

5

Abstract

Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 55 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 55 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in any of the tests performed in this study.

Keywords

III-V semiconductors; gallium compounds; radiation hardening (electronics); semiconductor device models; DDD/TID test; GaN; GaN device; SEB/SEGR test; electron volt energy 55 MeV; heavy ions; radiation characterization; radiation tolerance; Gallium nitride; Logic gates; Protons; Radiation effects; Semiconductor device measurement; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2011 IEEE

Conference_Location

Las Vegas, NV

ISSN

2154-0519

Print_ISBN

978-1-4577-1281-4

Type

conf

DOI

10.1109/REDW.2010.6062526

Filename

6062526