• DocumentCode
    2085130
  • Title

    Proton irradiation induced defects in oxygenated Si p-n junctions

  • Author

    Botila, T. ; Pintilie, I. ; Petre, D. ; Pintilie, L.

  • Author_Institution
    Nat. Inst. for Mater. Sci., Bucharest, Romania
  • Volume
    2
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    319
  • Abstract
    The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07×1012 cm-2 , 1.084×1013 cm-2 and 1.19×10 14 cm-2
  • Keywords
    elemental semiconductors; oxidation; p-n junctions; proton effects; silicon; thermally stimulated currents; 25 to 250 K; Si-SiO; optical charging spectroscopy; oxygenated Si p-n junctions; proton irradiation induced defects; thermally stimulated currents; Current measurement; Heating; Materials science and technology; P-n junctions; Physics; Position sensitive particle detectors; Protons; Silicon; Stimulated emission; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651027
  • Filename
    651027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2085130