• DocumentCode
    2086043
  • Title

    Exciton dephasing in quantum dot molecules

  • Author

    Borri, P. ; Langbein, W. ; Woggon, U. ; Schwab, M. ; Bayer, M. ; Fafard, S. ; Wasilewski, Z. ; Hawrylak, P.

  • Author_Institution
    Dortmund Univ.
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    565
  • Lastpage
    567
  • Abstract
    The exciton dephasing time from 5 K to 60 K is measured in InAs/GaAs quantum-dot molecules using a highly sensitive four-wave mixing technique and shows a systematic dependence from the interdot barrier thicknesses
  • Keywords
    III-V semiconductors; excitons; gallium arsenide; indium compounds; multiwave mixing; semiconductor quantum dots; 5 to 60 K; InAs-GaAs; exciton dephasing; four-wave mixing technique; interdot barrier thicknesses; quantum dot molecules;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1366895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2086043