A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application

In this letter, a self-compliant one-diode-one-resistor (1D1R) bipolar resistive random access memory (RRAM) has been demonstrated. By inserting a Ni/AlOy/n⁺-Si diode cell, a bipolar RRAM (TiN/HfOx/Ni) with a self-compliance current of 10 μA is achieved. This 1D1R memory cell exhibits excellent performance, such as high ON/OFF resistance ratio , good reproducibility and retention ( at 100 ^°C), and improved resistance distribution. And more importantly, by setting a lower SET applied voltage in the 1D1R cell, a reduced compliance current can be implemented, leading to a lower RESET voltage/current.