Design of a Ka-band GaN HEMT power amplifier based on simulation

Author

Xiaobin Luo ; Chao Yue ; Lijie Zhou ; Weihua Yu ; Xin Lv

Author_Institution

Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

24-25 Oct. 2013

Firstpage

456

Lastpage

459

Abstract

Based on the working mechanism of GaN components and monolithic microwave integrated power amplifiers, a four-stage and four-channel power amplifier design scheme has been realized by simulation in the paper. The physical structure of the GaN HEMT is proposed. Then DC and RF characteristics of the device are simulated in Silvaco. The S-parameters are extracted to design a power amplifier circuit in ADS according to the structure and electric performance of the HEMT. The results show that the output power of the amplifier circuit can reach 5.6W and the power gain is 21dB at 35GHz under CW condition. The PAE of the whole circuit is about 20%. Therefore, this power amplifier can be applied to Ka-band.

Keywords

III-V semiconductors; MMIC power amplifiers; S-parameters; gallium compounds; high electron mobility transistors; integrated circuit design; microwave amplifiers; radiofrequency power amplifiers; wide band gap semiconductors; DC characteristics; GaN; Ka-band HEMT power amplifier; RF characteristics; S-parameters; frequency 35 GHz; gain 21 dB; monolithic microwave integrated power amplifiers; power 5.6 W; Gallium nitride; HEMTs; Indexes; Laboratories; Power amplifiers; Power generation; Substrates; GaN HEMT; Ka-band; S-parameter; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/MMWCST.2013.6814550

Filename

6814550