DocumentCode
2088049
Title
Super-low-noise HEMT based on new HEMT noise model
Author
Joshin, Kazukiyo ; Ohori, Tatsuya ; Takikawa, Masahiko
Author_Institution
Fujitsu Laboratories Ltd 10-1, Morinosato-Wakamiya, Atsugi 243-01, JAPAN. Tel. +81 462 48 3111; Fax: +81 462 48 3672; e-mail: joshin@flab.fujitsu.co.jp
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
102
Lastpage
104
Abstract
Using a two-dimensional device simulation, we clarified why HEMT´s have a superior low-noise performance. The new HEMT noise model, which considers the cooling effect on the electron temperature, indicates that higher sheet carrier density leads to lower noise power. Using this noise model, super-low-noise HEMT´s with a 0.15-¿m T-shaped-gate were fabricated on an In0.49Ga0.51p/In0.25Ga0.75As heterostructure. The device achieved an optimum noise figure of 0.42 dB with an associated gain of 13.5 dB at 12 GHz.
Keywords
Acoustical engineering; Charge carrier density; Cooling; Electrodes; Electrons; Gallium arsenide; HEMTs; MESFETs; Noise figure; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336801
Filename
4136539
Link To Document