DocumentCode
2090240
Title
A 2.6 GHz Class-E power amplifier design
Author
Yun Wang ; Xiaohong Tang
Author_Institution
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2013
fDate
24-25 Oct. 2013
Firstpage
332
Lastpage
335
Abstract
A design of switching power amplifier (PA) with high efficiency and considerable output power is reported. This power amplifier is based on commercial available GaN HEMT device. Design process based on Source/Load Pull technique is described in detail. The simulation results show that the proposed amplifier achieves drain efficiency of 85%, power added efficiency of 82.5% and 40 dBm output power at 2.6 GHz. This power amplifier could be applied to TD-LTE base station.
Keywords
III-V semiconductors; Long Term Evolution; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN HEMT device; TD-LTE base station; efficiency 82.5 percent; efficiency 85 percent; frequency 2.6 GHz; source-load pull technique; switching power amplifier; Bandwidth; Educational institutions; HEMTs; Layout; Switches; Topology; Class-E; Power amplifier; TD-LTE; high efficiency; source/load Pull;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/MMWCST.2013.6814646
Filename
6814646
Link To Document