Low phose noise PM-HFET oscillators with dielectric stabilization for Ka-and W-band frequencies

Based on the results obtained from monolithic MESFET oscillators with dielectric resonator stabilization (DROs) [1,2], PM-HFET oscillators with a similar topology have been realized and investigated at frequencies up into the W-band. As the active device quarter-micron InGaAs-GaAs HFETh have been used which have shown high power gain cutoff-frequencies up to 200 GHz. The design is carried out by using in-house developed software and is based on an equivalent circuit derived from the HFET S-parameter data measured up to 40 GHz. The output power of the oscillators is 10 mW and I mW at 37 GHz and 81 GHz, respectively. The oscillators show state-of-the-art phase noise in the mm-wave frequency range, at 37 GHz the phase noise is as low as ¿97 dBc/Hz at 100 kHz off carrier.