Pulse-time modulated ECR plasma etching for highly selective, highly anisotropic and less-charging poly-Si gate patterning

Author

Samukawa, S. ; Terada, K.

Author_Institution

Microelectron. Res. Lab., NEC Corp., Ibaraki, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

27

Lastpage

28

Abstract

This paper proposes a new electron cyclotron resonance (ECR) plasma etching for precise gate electrode patterning in future ULSI circuits such as 1 Gbit DRAM. In this technology, 10 /spl mu/sec pulse-time modulated microwaves are introduced into the plasma chamber. The ECR plasma etching technique achieves highly selective (/spl ges/100), high-rate (/spl ges/3000 /spl Aring//min), highly anisotropic (even at 100% over-etching), notching-free and less-charging submicron poly-Si patterning.<>

Keywords

DRAM chips; VLSI; integrated circuit technology; pulse time modulation; sputter etching; 10 mus; 70 angstrom; DRAM; Si; ULSI circuits; anisotropic patterning; notching-free patterning; poly-Si gate patterning; pulse-time modulated ECR plasma etching; pulse-time modulated microwaves; submicron patterning; Cyclotrons; Electrodes; Electrons; Etching; Plasma applications; Pulse modulation; RLC circuits; Random access memory; Resonance; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324394

Filename

324394