• DocumentCode
    2090812
  • Title

    Ultrafast conductivity in amorphous semiconductors studied by time-resolved thz spectroscopy

  • Author

    Nampoothiri, A. V Vasudevan ; Dexheimer, S.L.

  • Author_Institution
    Dept. of Phys., Washington State Univ., Pullman, WA
  • fYear
    2004
  • fDate
    21-21 May 2004
  • Firstpage
    917
  • Lastpage
    918
  • Abstract
    We present studies of photoconductivity on picosecond time scales in amorphous silicon (a-Si:H) and related materials using time-resolved THz techniques. We find a strongly non-Drude response with a power-law frequency dependence characteristic of disordered systems
  • Keywords
    amorphous semiconductors; elemental semiconductors; high-speed optical techniques; photoconductivity; silicon; time resolved spectroscopy; Si:H; SiGe:H; amorphous silicon; nonDrude response; power-law frequency dependence characteristic; time-resolved THz spectroscopy; ultrafast conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2004. (IQEC). International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-778-4
  • Type

    conf

  • Filename
    1367066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2090812