DocumentCode
2090845
Title
Pulsed terahertz emission from indium nitride thin films
Author
Ascazubi, R. ; Wilke, I. ; Denniston, K. ; Lu, H. ; Schaff, W.J.
Author_Institution
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY
fYear
2004
fDate
21-21 May 2004
Firstpage
921
Lastpage
922
Abstract
We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors
Keywords
III-V semiconductors; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical films; semiconductor thin films; wide band gap semiconductors; InN; MBE; indium nitride films; pulsed terahertz emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1367068
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