DocumentCode
2091060
Title
Poly gate depletion effects on NMOS hot carrier reliability
Author
Aur, S. ; Chapman, A.A.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
143
Lastpage
144
Abstract
We report the poly depletion effects on hot carrier reliability. Although the poly depletion has been reported to improve the time dependent dielectric breakdown, we have found that the hot carrier reliability is worse. This is due to effective oxide thickness increase at measurement condition.<>
Keywords
electric breakdown of solids; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; NMOS devices; NMOS hot carrier reliability; effective oxide thickness increase; measurement condition; poly gate depletion effects; time dependent dielectric breakdown; Current measurement; Degradation; Dielectric breakdown; Doping; Hot carriers; Implants; Instruments; MOS devices; Stress measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324416
Filename
324416
Link To Document