An initial investigation into the use of focused ion beam technology for inline process control of critical dimensions in the FAB

In this study, we describe the use of a DualBeam (FIB/SEM) system to provide detailed feedback of data at critical process steps in the semiconductor manufacturing sequence. The combination of FIB and SEM gives us a DualBeam which enables us to rapidly obtain sub-surface data from semiconductor wafers in the production line. By performing a FIB cut, and viewing the cross-section with the SEM, we are able to get feedback without the need to break a wafer. The ability to perform multiple cuts, cross-sectional images and measurements all in automation is the ideal target of this work.