• DocumentCode
    2091527
  • Title

    Enabling DFM and APC strategies at the 32 nm technology node

  • Author

    Monahan, Kevin M.

  • Author_Institution
    KLA-Tencor Corp., Milpitas, CA, USA
  • fYear
    2005
  • fDate
    13-15 Sept. 2005
  • Firstpage
    398
  • Lastpage
    401
  • Abstract
    Most semiconductor manufacturers expect 193 nm immersion lithography to remain the dominant patterning technology through the 32 nm technology node. Even now, the interaction of more complex designs with shrinking process windows is severely limiting parametric yield. The industry is responding with strategies based upon design for manufacturability (DFM) and multivariate advanced process control (APC). The primary goal of DFM is to enlarge the process yield window, while the primary goal of APC is to keep the manufacturing process in that yield window. In this work, we discuss new and innovative process metrics, including virtual metrology, that will be needed for yield at the 32 nm technology node.
  • Keywords
    design for manufacture; integrated circuit measurement; integrated circuit yield; lithography; process control; advanced process control; design for manufacturability; immersion lithography; innovative process metrics; manufacturing process; patterning technology; process yield window; shrinking process windows; virtual metrology; Costs; Design for manufacture; Manufacturing processes; Metrology; Numerical analysis; Predictive models; Process control; Semiconductor device manufacture; Shape measurement; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
  • Print_ISBN
    0-7803-9143-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2005.1513388
  • Filename
    1513388