• DocumentCode
    2092134
  • Title

    Electron-beam assisted platinum deposition as a protective layer for FIB and TEM applications

  • Author

    Kwong, W.Y. ; Zhang, W.Y.

  • Author_Institution
    Systems on Silicon Mfg Co., Singapore, Singapore
  • fYear
    2005
  • fDate
    13-15 Sept. 2005
  • Firstpage
    469
  • Lastpage
    471
  • Abstract
    In FIB (focused ion beam) applications, ion beam (Ga+) assisted Pt deposition is commonly used as a protection layer for subsequent milling for cross-section or TEM sample preparation. But the damage induced by ion beam during Pt deposition makes tiny feature analysis very difficult or impossible. In this paper, a new method by using two deposition steps, first using electron beam induced Pt deposition then subsequently follow by ion beam induced Pt deposition, was developed to address the above tough issues. By this new method, nearly no damage was introduced to the features of interest during Pt deposition. This new technique was applied to practical FA cases and demonstrated to be successful.
  • Keywords
    electron beam deposition; integrated circuit manufacture; ion beam assisted deposition; platinum; protective coatings; transmission electron microscopy; electron-beam assisted platinum deposition; focused ion beam; ion beam induced platinum deposition; protective layer; Acceleration; Amorphous materials; Electron beams; Ion beams; Milling; Platinum; Protection; Silicon; Strips; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
  • Print_ISBN
    0-7803-9143-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2005.1513408
  • Filename
    1513408