Design of voltage-controlled oscillator in GSM/EDGE handset RFIC

Author

Xu, Chen ; Feng, Xu ; Ru, Huang ; Xin´an, Wang ; Lu, Tang

Author_Institution

Key Lab. of Integrated Micro-Syst., Peking Univ., Shenzhen, China

fYear

2010

fDate

11-14 Nov. 2010

Firstpage

1382

Lastpage

1385

Abstract

Based on the requirements of phase noise and frequency tuning range of the GSM system, this paper designs a voltage-controlled oscillator suitable for GSM/EDGE handset RFIC with the structure of no-tail current source and switched-capacitor array. The whole circuit uses TSMC 0.18 μm CMOS technology. The power supply is 3.3V. The simulation results show that the operating frequency covers 3296 ~ 3980 MHz, the peak value of output voltage is 5.32V@3622 MHz, and the phase noise is -101.41 dBc/Hz at 100 kHz offset and -155.37 dBc/Hz at 20 MHz offset. It will satisfy the requirements of GSM/EDGE application.

Keywords

3G mobile communication; CMOS integrated circuits; cellular radio; radiofrequency integrated circuits; voltage-controlled oscillators; GSM-EDGE handset RFIC; TSMC CMOS technology; VCO; frequency 100 kHz; frequency 20 MHz; frequency 3296 MHz to 3980 MHz; frequency tuning range; no-tail current source; phase noise; size 0.18 mum; switched-capacitor array; voltage 3.3 V; voltage 5.32 V; voltage-controlled oscillator design; Active circuits; Integrated circuit modeling; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Technology (ICCT), 2010 12th IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6868-3

Type

conf

DOI

10.1109/ICCT.2010.5689030

Filename

5689030