DocumentCode
2094357
Title
Low power consumption Ge/SiGe quantum well optical modulator
Author
Marris-Morini, D. ; Chaisakul, Papichaya ; Rouifed, Mohamed-Said ; Isella, Giovanni ; Chrastina, D. ; Frigerio, Jacopo ; Le Roux, X. ; Edmond, Samson ; Coudevylle, Jean-Rene ; Vivien, L.
Author_Institution
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.
Keywords
Ge-Si alloys; Stark effect; integrated optics; optical modulation; optical waveguides; quantum well devices; Ge-SiGe; Stark effect; bandwidth 23 GHz; quantum well optical modulator; quantum well waveguide modulator; voltage 1 V; Ge/SiGe; Quantum-confined Stark effect; multiple quantum well modulators;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510815
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