DocumentCode
2095343
Title
Mobility in UTB-SOI PFETS: local coordinate-based modeling with the density gradient method
Author
Connelly, Daniel ; Grupp, D.E. ; Leon, Paco ; Yergeau, Dan
Author_Institution
Acorn Technologies, Palo Alto, CA, USA
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
51
Lastpage
54
Abstract
Here, for the first time, a local coordinate-based method is used to model surface acoustic phonon and thickness variation scattering in Si/SiO/sub 2/ PMOS structures using the density-gradient method. A reduction in mobility below that predicted by the electric-field based "universal mobility" curves for ultra-thin-body SOI devices is predicted in excellent agreement with recently published experimental data. An extension to multiple dimensions, demonstrated with some simple examples, is then applied to cylindrical devices, showing the mobility reduction of two-dimensional confinement.
Keywords
MOSFET; carrier mobility; phonons; semiconductor device models; silicon-on-insulator; surface scattering; 2D confinement; PMOS structures; Si-SiO/sub 2/; UTB-SOI PFETS; carrier mobility; cylindrical devices; density gradient method; local coordinate-based modeling; mobility reduction; multiple dimensions extension; surface acoustic phonon scattering; thickness variation scattering; ultra-thin-body structures; Acoustic devices; Acoustic scattering; Electrons; Gradient methods; Impurities; Particle scattering; Permittivity; Phonons; Potential well; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233635
Filename
1233635
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