• DocumentCode
    2095343
  • Title

    Mobility in UTB-SOI PFETS: local coordinate-based modeling with the density gradient method

  • Author

    Connelly, Daniel ; Grupp, D.E. ; Leon, Paco ; Yergeau, Dan

  • Author_Institution
    Acorn Technologies, Palo Alto, CA, USA
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    Here, for the first time, a local coordinate-based method is used to model surface acoustic phonon and thickness variation scattering in Si/SiO/sub 2/ PMOS structures using the density-gradient method. A reduction in mobility below that predicted by the electric-field based "universal mobility" curves for ultra-thin-body SOI devices is predicted in excellent agreement with recently published experimental data. An extension to multiple dimensions, demonstrated with some simple examples, is then applied to cylindrical devices, showing the mobility reduction of two-dimensional confinement.
  • Keywords
    MOSFET; carrier mobility; phonons; semiconductor device models; silicon-on-insulator; surface scattering; 2D confinement; PMOS structures; Si-SiO/sub 2/; UTB-SOI PFETS; carrier mobility; cylindrical devices; density gradient method; local coordinate-based modeling; mobility reduction; multiple dimensions extension; surface acoustic phonon scattering; thickness variation scattering; ultra-thin-body structures; Acoustic devices; Acoustic scattering; Electrons; Gradient methods; Impurities; Particle scattering; Permittivity; Phonons; Potential well; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233635
  • Filename
    1233635